CEL NE3503M04-A View larger

CEL NE3503M04-A



Transistors RF JFET Low Noise HJ FET

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$ 2.76

133 133 Items In Stock

Specification of NE3503M04-A

Manufacturer CEL
Maximum Operating Temperature + 125 C
Technology GaAs
Product Category Transistors RF JFET
Manufacturer Part No. NE3503M04-A
Gain 12 dB
Alternate Part No. 551-NE3503M04-A
Vgs - Gate-Source Breakdown Voltage - 3 V
Frequency 12 GHz
Vds - Drain-Source Breakdown Voltage 4 V
Transistor Polarity N-Channel
Pd - Power Dissipation 125 mW
Package/Case FTSMM-4 (M04)
Gate-Source Cut-off Voltage - 0.7 V
Brand CEL
Transistor Type HFET
Mounting Style SMD/SMT
Noise Figure 0.45 dB
Forward Transconductance - Min 55 mS
Id - Continuous Drain Current 70 mA

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