CEL NE3510M04-T2-A View larger

CEL NE3510M04-T2-A



Transistors RF JFET L-S Band Lo No Amp

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$ 2.85

723 723 Items In Stock

Specification of NE3510M04-T2-A

Vgs - Gate-Source Breakdown Voltage - 3 V
Product Category Transistors RF JFET
Noise Figure 0.45 dB
Pd - Power Dissipation 125 mW
Frequency 4 GHz
Technology GaAs
Transistor Type HFET
Gain 16 dB
Manufacturer Part No. NE3510M04-T2-A
Id - Continuous Drain Current 97 mA
Forward Transconductance - Min 70 mS
Transistor Polarity N-Channel
P1dB 11 dBm
Alternate Part No. 551-NE3510M04-T2-A
Brand CEL
Package/Case FTSMM-4 (M04)
Mounting Style SMD/SMT
Maximum Operating Temperature + 150 C
Packaging Reel
Vds - Drain-Source Breakdown Voltage 4 V
Manufacturer CEL

More info

Part number for sample order: NE3510M04-A. ABSOLUTE MAXIMUM RATINGS ( TA = +25°C). Parameter. Symbol. Ratings. Unit. Drain to Source Voltage. VDS. [1]

NE3510M04-T2-A CEL RF JFET Transistors L-S Band Lo No Amp RF JFET Transistors Pricing and Availability. [2]

Find CEL NE3510M04-T2-A (NE3510M04-T2-ACT-ND) at DigiKey. Check stock and pricing, view product specifications, and order online. [3]

CALIFORNIA EASTERN LABORATORIES. NE3510 Series 4 GHz L to S Band Low Noise Amplifier HJ-FET - ThinMiniMold-4. Mfr Part#: NE3510M04-T2-A [4]

NE3510M04-A. 50 pcs (Non reel). V81. NE3510M04-T2 NE3510M04-T2-A. 3 kpcs/reel. NE3510M04-T2B NE3510M04-T2B-A. Flat-lead 4-pin thin-type super. [5]

18V. )leernoN(scp05. A-40M0153EN. 40M0153EN. NE3510M04-T2. NE3510M04-T2-A. Flat-lead 4-pin thin- type super minimold. (M04) (Pb-Free). 3 kpcs/reel. [6]