CEL NE3510M04-T2-A View larger

CEL NE3510M04-T2-A

CEL

NE3510M04-T2-A


Transistors RF JFET L-S Band Lo No Amp

$ 2.85

723 723 Items In Stock

Specification of NE3510M04-T2-A

Vgs - Gate-Source Breakdown Voltage - 3 V
Product Category Transistors RF JFET
Noise Figure 0.45 dB
Pd - Power Dissipation 125 mW
Frequency 4 GHz
Technology GaAs
Transistor Type HFET
Gain 16 dB
Manufacturer Part No. NE3510M04-T2-A
Id - Continuous Drain Current 97 mA
Forward Transconductance - Min 70 mS
Transistor Polarity N-Channel
P1dB 11 dBm
Alternate Part No. 551-NE3510M04-T2-A
Brand CEL
Package/Case FTSMM-4 (M04)
Mounting Style SMD/SMT
Maximum Operating Temperature + 150 C
Packaging Reel
Vds - Drain-Source Breakdown Voltage 4 V
Manufacturer CEL