CEL NE3511S02-T1C-A View larger

CEL NE3511S02-T1C-A

CEL

NE3511S02-T1C-A


Transistors RF JFET SUPER Lo Noise PseudomorpHIc HJ FET

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$ 3.62

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Specification of NE3511S02-T1C-A

Maximum Operating Temperature + 125 C
Id - Continuous Drain Current 70 mA
Packaging Reel
Brand CEL
Transistor Polarity N-Channel
Pd - Power Dissipation 165 mW
Noise Figure 0.3 dB
Package/Case S0-2
Gain 13.5 dB
Manufacturer Part No. NE3511S02-T1C-A
Mounting Style SMD/SMT
Frequency 12 GHz
Forward Transconductance - Min 65 mS
Manufacturer CEL
Technology GaAs
Alternate Part No. 551-NE3511S02-T1C-A
Transistor Type HFET
Product Category Transistors RF JFET
Vgs - Gate-Source Breakdown Voltage - 3 V
Vds - Drain-Source Breakdown Voltage 4 V

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