CEL NE3514S02-A View larger

CEL NE3514S02-A

CEL

NE3514S02-A


Transistors RF JFET K Band Super Low Noise Amp N-Ch

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$ 4.29

350 350 Items In Stock

Specification of NE3514S02-A

Transistor Type pHEMT
Frequency 20 GHz
Manufacturer Part No. NE3514S02-A
Mounting Style SMD/SMT
Manufacturer CEL
Gate-Source Cut-off Voltage - 0.7 V
Maximum Operating Temperature + 125 C
Noise Figure 0.75 dB
Package/Case S0-2
Vds - Drain-Source Breakdown Voltage 4 V
Gain 10 dB
Alternate Part No. 551-NE3514S02-A
Brand CEL
Packaging Bulk
Product Category Transistors RF JFET
Vgs - Gate-Source Breakdown Voltage - 3 V
Forward Transconductance - Min 55 mS
Technology GaAs
Id - Continuous Drain Current 70 mA
Pd - Power Dissipation 165 mW

More info

... RF JFET Transistors are available at Mouser Electronics. Mouser offers inventory, pricing, & datasheets for CEL 551-NE3514S02-A RF JFET Transistors. [1]

References