CEL NE3515S02-T1C-A View larger

CEL NE3515S02-T1C-A

CEL

NE3515S02-T1C-A


Transistors RF JFET Super Low Noise Pseudomorphic

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$ 4.01

1307 1307 Items In Stock

Specification of NE3515S02-T1C-A

Package/Case S0-2
Product Category Transistors RF JFET
Packaging Reel
Manufacturer CEL
P1dB 14 dBm
Brand CEL
Forward Transconductance - Min 70 mS
Id - Continuous Drain Current 88 mA
Manufacturer Part No. NE3515S02-T1C-A
Frequency 12 GHz
Technology GaAs
Vgs - Gate-Source Breakdown Voltage - 3 V
Noise Figure 0.3 dB
Gain 12.5 dB
Maximum Operating Temperature + 125 C
Mounting Style SMD/SMT
Transistor Type pHEMT
Alternate Part No. 551-NE3515S02-T1C-A
Vds - Drain-Source Breakdown Voltage 4 V
Pd - Power Dissipation 165 mW

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NE3515S02-T1C-A CEL RF JFET Transistors Super Low Noise Pseudomorphic RF JFET Transistors Pricing and Availability. [1]

NE3515S02-T1C-A CEL Transistores RF JFET Super Low Noise Pseudomorphic Transistores RF JFET precio y disponibilidad. [2]

Find CEL NE3515S02-T1C-A (NE3515S02-T1C-ACT-ND) at DigiKey. Check stock and pricing, view product specifications, and order online. [3]

NE3515S02-T1C-A CEL RF JFET-transistorer Super Low Noise Pseudomorphic RF JFET-transistorer prissättning och tillgänglighet. [4]

Order Number. Package. Quantity. Marking. Supplying Form. NE3515S02-T1C NE3515S02-T1C-A S02 (Pb-Free) 2 kpcs/reel. G. • 8 mm wide embossed taping. [5]

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