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Fairchild Semiconductor FDD3670

Fairchild Semiconductor


MOSFET 100V NCh PowerTrench

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$ 3.95

1710 1710 Items In Stock

Specification of FDD3670

Alternate Part No. 512-FDD3670
Manufacturer Fairchild Semiconductor
Rise Time 10 ns
Configuration Single
Rds On - Drain-Source Resistance 22 mOhms
Forward Transconductance - Min 31 S
Part # Aliases FDD3670_NL
Unit Weight 260.370 mg
Fall Time 25 ns
Series FDD3670
Mounting Style SMD/SMT
Channel Mode Enhancement
Product Category MOSFET
Typical Turn-Off Delay Time 56 ns
Vgs - Gate-Source Breakdown Voltage 20 V
Manufacturer Part No. FDD3670
Brand Fairchild Semiconductor
Packaging Reel
Package/Case DPAK-2
Transistor Polarity N-Channel
Maximum Operating Temperature + 175 C
Pd - Power Dissipation 3.8 W
Id - Continuous Drain Current 34 A
Vds - Drain-Source Breakdown Voltage 100 V
Minimum Operating Temperature - 55 C

More info

FDD3670. 100V N-Channel PowerTrench® MOSFET. This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC ... [1]

FDD3670 Rev A(W). FDD3670. 100V N-Channel PowerTrench.. MOSFET. General Description. This N-Channel MOSFET has been designed specifically to ... [2]

June 2001 FDD3670 100V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed � 34 A, 100 V . R ... [3]

FDD3670 Rev C1. Electrical Characteristics. TA = 25°C unless otherwise noted. Symbol. Parameter. Test Conditions. Min Typ Max Units. Drain-Source ... [4]