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MOSFET
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Specification of FDD5N50NZTM
| Manufacturer | Fairchild Semiconductor |
| Mounting Style | SMD/SMT |
| Vds - Drain-Source Breakdown Voltage | 500 V |
| Fall Time | 21 ns |
| Unit Weight | 260.370 mg |
| Package/Case | DPAK-2 |
| Configuration | Single |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Qg - Gate Charge | 12 nC |
| Product Category | MOSFET |
| Rds On - Drain-Source Resistance | 1.5 Ohms |
| Typical Turn-Off Delay Time | 28 ns |
| Pd - Power Dissipation | 62 W |
| Forward Transconductance - Min | 3.54 S |
| Brand | Fairchild Semiconductor |
| Manufacturer Part No. | FDD5N50NZTM |
| Packaging | Reel |
| Series | FDD5N50 |
| Transistor Polarity | N-Channel |
| Vgs - Gate-Source Breakdown Voltage | 25 V |
| Channel Mode | Enhancement |
| Id - Continuous Drain Current | 4 A |
| Rise Time | 22 ns |
| Alternate Part No. | 512-FDD5N50NZTM |