Fairchild Semiconductor FDD850N10LD View larger

Fairchild Semiconductor FDD850N10LD

Fairchild Semiconductor

FDD850N10LD


MOSFET 100V, 15.7A, 75mOhm N-Channel BoostPak

$ 1.75

90 90 Items In Stock

Specification of FDD850N10LD

Transistor Polarity N-Channel
Manufacturer Part No. FDD850N10LD
Channel Mode Enhancement
Fall Time 8 ns
Pd - Power Dissipation 42 W
Forward Transconductance - Min 31 S
Series FDD850N10L
Alternate Part No. 512-FDD850N10LD
Packaging Reel
Configuration Single
Maximum Operating Temperature + 150 C
Unit Weight 260.370 mg
Product Category MOSFET
Mounting Style SMD/SMT
Rds On - Drain-Source Resistance 75 mOhms
Vgs - Gate-Source Breakdown Voltage 20 V
Minimum Operating Temperature - 55 C
Typical Turn-Off Delay Time 27 ns
Manufacturer Fairchild Semiconductor
Qg - Gate Charge 22.2 nC
Brand Fairchild Semiconductor
Rise Time 21 ns
Id - Continuous Drain Current 15.7 A
Vds - Drain-Source Breakdown Voltage 100 V
Package/Case DPAK-4