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Fairchild Semiconductor FDP053N08B_F102

Fairchild Semiconductor

FDP053N08B_F102


MOSFET Smart Power Module

$ 4.65

452 452 Items In Stock

Specification of FDP053N08B_F102

Vgs th - Gate-Source Threshold Voltage 4.5 V
Rds On - Drain-Source Resistance 5.3 mOhms
Rise Time 30 ns
Configuration Single
Maximum Operating Temperature + 175 C
Vgs - Gate-Source Breakdown Voltage 20 V
Fall Time 16 ns
Series FDP053N08B
Package/Case TO-220-3
Brand Fairchild Semiconductor
Id - Continuous Drain Current 120 A
Typical Turn-Off Delay Time 44 ns
Manufacturer Part No. FDP053N08B_F102
Product Category MOSFET
Vds - Drain-Source Breakdown Voltage 80 V
Manufacturer Fairchild Semiconductor
Mounting Style Through Hole
Qg - Gate Charge 65.4 nC
Forward Transconductance - Min 100 S
Pd - Power Dissipation 146 W
Unit Weight 1.800 g
Ciss - Input Capacitance 4480 pF
Alternate Part No. 512-FDP053N08B_F102
Packaging Tube
Transistor Polarity N-Channel
Channel Mode Enhancement
Minimum Operating Temperature - 55 C