Fairchild Semiconductor FDP12N50 View larger

Fairchild Semiconductor FDP12N50

Fairchild Semiconductor

FDP12N50


MOSFET 500V N-Channel

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$ 2.93

564 564 Items In Stock

Specification of FDP12N50

Vds - Drain-Source Breakdown Voltage 500 V
Configuration Single
Fall Time 30 ns
Packaging Tube
Brand Fairchild Semiconductor
Pd - Power Dissipation 165 W
Maximum Operating Temperature + 150 C
Channel Mode Enhancement
Mounting Style Through Hole
Manufacturer Part No. FDP12N50
Forward Transconductance - Min 11.5 S
Rise Time 50 ns
Manufacturer Fairchild Semiconductor
Unit Weight 1.800 g
Vgs - Gate-Source Breakdown Voltage 30 V
Product Category MOSFET
Series FDP12N50
Transistor Polarity N-Channel
Rds On - Drain-Source Resistance 550 mOhms
Alternate Part No. 512-FDP12N50
Minimum Operating Temperature - 55 C
Typical Turn-Off Delay Time 45 ns
Id - Continuous Drain Current 6.9 A
Package/Case TO-220-3

More info

FDP12N50. N-Channel UniFETTM MOSFET 500V, 11.5A, 650mΩ. UniFETTM MOSFET is Fairchild Semiconductor's high voltage MOSFET family based on ... [1]

FDP12N50 datasheet, FDP12N50 circuit, FDP12N50 data sheet : FAIRCHILD - N -Channel MOSFET 500V, 11.5A, 0.65Ω ,alldatasheet, datasheet, Datasheet ... [2]

Nov 1, 2013 - D. MOSFET Maximum Ratings TC = 25oC unless otherwise noted. Thermal Characteristics. Symbol. Parameter. FDP12N50. FDPF12N50T Unit. [3]

FDP12N50 Fairchild Semiconductor MOSFET 500V N-Channel MOSFET Pricing and Availability. [4]

FDP12N50 datasheet, FDP12N50 pdf, FDP12N50 data sheet, datasheet, data sheet, pdf, Fairchild Semiconductor, N-Channel UniFETTM MOSFET 500V, 11.5A , ... [5]

Find Fairchild Semiconductor FDP12N50 (FDP12N50-ND) at DigiKey. Check stock and pricing, view product specifications, and order online. [6]

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