Fairchild Semiconductor FDP12N50 View larger

Fairchild Semiconductor FDP12N50

Fairchild Semiconductor

FDP12N50


MOSFET 500V N-Channel

$ 2.93

564 564 Items In Stock

Specification of FDP12N50

Vds - Drain-Source Breakdown Voltage 500 V
Configuration Single
Fall Time 30 ns
Packaging Tube
Brand Fairchild Semiconductor
Pd - Power Dissipation 165 W
Maximum Operating Temperature + 150 C
Channel Mode Enhancement
Mounting Style Through Hole
Manufacturer Part No. FDP12N50
Forward Transconductance - Min 11.5 S
Rise Time 50 ns
Manufacturer Fairchild Semiconductor
Unit Weight 1.800 g
Vgs - Gate-Source Breakdown Voltage 30 V
Product Category MOSFET
Series FDP12N50
Transistor Polarity N-Channel
Rds On - Drain-Source Resistance 550 mOhms
Alternate Part No. 512-FDP12N50
Minimum Operating Temperature - 55 C
Typical Turn-Off Delay Time 45 ns
Id - Continuous Drain Current 6.9 A
Package/Case TO-220-3