Fairchild Semiconductor FDP18N50 View larger

Fairchild Semiconductor FDP18N50

Fairchild Semiconductor

FDP18N50


MOSFET 500V N-Channel PowerTrenchAr MOSFET

$ 4.99

210 210 Items In Stock

Specification of FDP18N50

Vds - Drain-Source Breakdown Voltage 500 V
Rds On - Drain-Source Resistance 265 mOhms
Pd - Power Dissipation 38.5 W
Manufacturer Part No. FDP18N50
Channel Mode Enhancement
Maximum Operating Temperature + 150 C
Product Category MOSFET
Rise Time 165 ns
Id - Continuous Drain Current 8 A
Vgs - Gate-Source Breakdown Voltage 30 V
Transistor Polarity N-Channel
Mounting Style Through Hole
Alternate Part No. 512-FDP18N50
Series FDP18N50
Configuration Single
Packaging Tube
Typical Turn-Off Delay Time 95 ns
Minimum Operating Temperature - 55 C
Fall Time 90 ns
Unit Weight 1.800 g
Brand Fairchild Semiconductor
Manufacturer Fairchild Semiconductor
Package/Case TO-220-3
Forward Transconductance - Min 25 S