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IGBT Transistors
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Fairchild Semiconductor FGH30T65UPDT_F155
IGBT Transistors 650V, 30A Field Stop Trench IGBT
Specification of FGH30T65UPDT_F155
| Manufacturer | Fairchild Semiconductor |
| Packaging | Tube |
| Mounting Style | Through Hole |
| Series | FGH30T65UPDT_F155 |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 175 C |
| Manufacturer Part No. | FGH30T65UPDT_F155 |
| Maximum Gate Emitter Voltage | 20 V |
| Collector-Emitter Saturation Voltage | 2.1 V |
| Power Dissipation | 250 W |
| Continuous Collector Current at 25 C | 60 A |
| Continuous Collector Current Ic Max | 30 A |
| Collector- Emitter Voltage VCEO Max | 650 V |
| Product Category | IGBT Transistors |
| Unit Weight | 6.390 g |
| Brand | Fairchild Semiconductor |
| Package/Case | TO-247-3 |
| Gate-Emitter Leakage Current | 400 nA |
| Configuration | Single |
| Alternate Part No. | 512-30T65UPDT_F155 |