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Manufacturer | Fairchild Semiconductor |
Packaging | Tube |
Mounting Style | Through Hole |
Series | FGH30T65UPDT_F155 |
Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 175 C |
Manufacturer Part No. | FGH30T65UPDT_F155 |
Maximum Gate Emitter Voltage | 20 V |
Collector-Emitter Saturation Voltage | 2.1 V |
Power Dissipation | 250 W |
Continuous Collector Current at 25 C | 60 A |
Continuous Collector Current Ic Max | 30 A |
Collector- Emitter Voltage VCEO Max | 650 V |
Product Category | IGBT Transistors |
Unit Weight | 6.390 g |
Brand | Fairchild Semiconductor |
Package/Case | TO-247-3 |
Gate-Emitter Leakage Current | 400 nA |
Configuration | Single |
Alternate Part No. | 512-30T65UPDT_F155 |