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Fairchild Semiconductor FQA11N90_F109

Fairchild Semiconductor

FQA11N90_F109


MOSFET 900V N-Channel QFET

$ 8.12

253 253 Items In Stock

Specification of FQA11N90_F109

Rise Time 135 ns
Channel Mode Enhancement
Minimum Operating Temperature - 55 C
Packaging Tube
Configuration Single
Mounting Style Through Hole
Manufacturer Fairchild Semiconductor
Series FQA11N90
Transistor Polarity N-Channel
Vds - Drain-Source Breakdown Voltage 900 V
Rds On - Drain-Source Resistance 960 mOhms
Vgs - Gate-Source Breakdown Voltage 30 V
Unit Weight 6.401 g
Pd - Power Dissipation 300 W
Fall Time 90 ns
Manufacturer Part No. FQA11N90_F109
Alternate Part No. 512-FQA11N90_F109
Brand Fairchild Semiconductor
Product Category MOSFET
Package/Case TO-3P-3
Typical Turn-Off Delay Time 165 ns
Id - Continuous Drain Current 11.4 A
Maximum Operating Temperature + 150 C