New NXP BUK7613-100E,118 View larger

NXP BUK7613-100E,118

NXP

BUK7613-100E,118


MOSFET N-channel TrenchMOS standard level FET

$ 2.71

392 392 Items In Stock

Specification of BUK7613-100E,118

Alternate Part No. 771-BUK7613-100E118
Pd - Power Dissipation 182 W
Brand NXP Semiconductors
Product Category MOSFET
Configuration Single
Maximum Operating Temperature + 175 C
Fall Time 34.1 ns
Manufacturer NXP
Qg - Gate Charge 69.4 nC
Vds - Drain-Source Breakdown Voltage 100 V
Rise Time 34 ns
Vgs th - Gate-Source Threshold Voltage 3 V
Manufacturer Part No. BUK7613-100E,118
Id - Continuous Drain Current 72 A
Package/Case SOT-404-3
Channel Mode Enhancement
Rds On - Drain-Source Resistance 10.2 mOhms
Vgs - Gate-Source Breakdown Voltage 20 V
Typical Turn-Off Delay Time 44.8 ns
Minimum Operating Temperature - 55 C
Mounting Style SMD/SMT
Transistor Polarity N-Channel
Packaging Reel