NXP BUK762R6-60E,118 View larger

NXP BUK762R6-60E,118

NXP

BUK762R6-60E,118


MOSFET N-channel TrenchMOS standard level FET

$ 4.72

314 314 Items In Stock

Specification of BUK762R6-60E,118

Typical Turn-Off Delay Time 87 ns
Id - Continuous Drain Current 120 A
Manufacturer Part No. BUK762R6-60E,118
Product Category MOSFET
Minimum Operating Temperature - 55 C
Vgs th - Gate-Source Threshold Voltage 3 V
Transistor Polarity N-Channel
Mounting Style SMD/SMT
Vgs - Gate-Source Breakdown Voltage 20 V
Channel Mode Enhancement
Brand NXP Semiconductors
Manufacturer NXP
Qg - Gate Charge 140 nC
Vds - Drain-Source Breakdown Voltage 60 V
Fall Time 58 ns
Pd - Power Dissipation 324 W
Maximum Operating Temperature + 175 C
Configuration Single
Packaging Reel
Rds On - Drain-Source Resistance 1.97 mOhms
Package/Case SOT-404-3
Alternate Part No. 771-BUK762R6-60E118
Rise Time 50 ns