NXP BUK9230-100B,118 View larger

NXP BUK9230-100B,118

NXP

BUK9230-100B,118


MOSFET HIGH PERF TRENCHMOS

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$ 2.83

416 416 Items In Stock

Specification of BUK9230-100B,118

Channel Mode Enhancement
Packaging Reel
Vds - Drain-Source Breakdown Voltage 100 V
Pd - Power Dissipation 167 W
Fall Time 46 ns
Package/Case SOT-428-3
Product Category MOSFET
Mounting Style SMD/SMT
Manufacturer NXP
Vgs - Gate-Source Breakdown Voltage 15 V
Rds On - Drain-Source Resistance 28 mOhms
Typical Turn-Off Delay Time 96 ns
Part # Aliases /T3 BUK9230-100B
Configuration Single
Alternate Part No. 771-BUK9230-100B118
Transistor Polarity N-Channel
Maximum Operating Temperature + 185 C
Rise Time 86 ns
Id - Continuous Drain Current 47 A
Brand NXP Semiconductors
Manufacturer Part No. BUK9230-100B,118
Minimum Operating Temperature - 55 C

More info

BUK9230-100B - Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has ... [1]

1. 2. 2011 - NXP Semiconductors. BUK9230-100B. N-channel TrenchMOS logic level FET. 2. Pinning information. [1] It is not possible to make a connection ... [2]

BUK9230-100B,118 NXP Semiconductors MOSFET HIGH PERF TRENCHMOS datasheet, inventory, & pricing. [3]

BUK9230-100B,118 Nexperia MOSFET HIGH PERF TRENCHMOS datasheet, inventory & pricing. [4]

NXP Semiconductors BUK9230-100B,118. Single N-Channel 100 V 78 mOhm 33 nC 167 W Silicon SMT Mosfet - TO-252-3. Datasheet. Add to BOM. [5]

BUK9230-100B datasheet, BUK9230-100B pdf, BUK9230-100B data sheet, datasheet, data sheet, pdf, NXP Semiconductors, N-channel TrenchMOS logic level ... [6]

References