NXP BUK962R8-60E,118 View larger

NXP BUK962R8-60E,118



MOSFET N-channel TrenchMOS logic level FET

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$ 5.54

405 405 Items In Stock

Specification of BUK962R8-60E,118

Configuration Single
Rise Time 88 ns
Vds - Drain-Source Breakdown Voltage 60 V
Manufacturer NXP
Vgs - Gate-Source Breakdown Voltage 15 V
Qg - Gate Charge 96 nC
Channel Mode Enhancement
Typical Turn-Off Delay Time 115 ns
Rds On - Drain-Source Resistance 2.29 mOhms
Product Category MOSFET
Packaging Reel
Manufacturer Part No. BUK962R8-60E,118
Id - Continuous Drain Current 120 A
Pd - Power Dissipation 324 W
Brand NXP Semiconductors
Mounting Style SMD/SMT
Package/Case SOT-404-3
Fall Time 81 ns
Minimum Operating Temperature - 55 C
Alternate Part No. 771-BUK962R8-60E118
Vgs th - Gate-Source Threshold Voltage 1.7 V
Maximum Operating Temperature + 175 C
Transistor Polarity N-Channel

More info

Buy BUK962R8-60E,118 NXP Semiconductors (568-10251-1-ND) at digikey.hk. ... Exact specifications should be obtained from the product data sheet. [1]

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BUK962R8-60E. N-channel TrenchMOS logic level FET. 13 July 2012. Product data sheet. Scan or click this QR code to view the latest information for this ... [3]