NXP BUK963R3-60E,118 View larger

NXP BUK963R3-60E,118

NXP

BUK963R3-60E,118


MOSFET N-channel TrenchMOS logic level FET

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$ 4.50

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Specification of BUK963R3-60E,118

Id - Continuous Drain Current 120 A
Vgs - Gate-Source Breakdown Voltage 15 V
Configuration Single
Maximum Operating Temperature + 175 C
Pd - Power Dissipation 293 W
Channel Mode Enhancement
Brand NXP Semiconductors
Alternate Part No. 771-BUK963R3-60E118
Minimum Operating Temperature - 55 C
Typical Turn-Off Delay Time 158 ns
Packaging Reel
Rds On - Drain-Source Resistance 2.73 mOhms
Qg - Gate Charge 95 nC
Mounting Style SMD/SMT
Transistor Polarity N-Channel
Vgs th - Gate-Source Threshold Voltage 1.7 V
Manufacturer NXP
Product Category MOSFET
Package/Case SOT-404-3
Rise Time 100 ns
Vds - Drain-Source Breakdown Voltage 60 V
Fall Time 109 ns
Manufacturer Part No. BUK963R3-60E,118

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