NXP BUK9Y14-80E,115 View larger

NXP BUK9Y14-80E,115



MOSFET N-channel TrenchMOS logic level FET

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$ 1.85

182 182 Items In Stock

Specification of BUK9Y14-80E,115

Vds - Drain-Source Breakdown Voltage 80 V
Alternate Part No. 771-BUK9Y14-80E115
Packaging Reel
Manufacturer NXP
Maximum Operating Temperature + 175 C
Vgs - Gate-Source Breakdown Voltage 15 V
Rds On - Drain-Source Resistance 12.2 mOhms
Id - Continuous Drain Current 62 A
Mounting Style SMD/SMT
Transistor Polarity N-Channel
Vgs th - Gate-Source Threshold Voltage 1.7 V
Brand NXP Semiconductors
Qg - Gate Charge 28.9 nC
Rise Time 24.6 ns
Package/Case LFPAK-4
Configuration Single
Typical Turn-Off Delay Time 45.3 ns
Minimum Operating Temperature - 55 C
Product Category MOSFET
Channel Mode Enhancement
Pd - Power Dissipation 147 W
Fall Time 24.7 ns
Manufacturer Part No. BUK9Y14-80E,115

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