NXP BUK9Y22-100E,115 View larger

NXP BUK9Y22-100E,115

NXP

BUK9Y22-100E,115


MOSFET N-channel 100 V 22 mo FET

$ 2.45

1242 1242 Items In Stock

Specification of BUK9Y22-100E,115

Vds - Drain-Source Breakdown Voltage 100 V
Manufacturer Part No. BUK9Y22-100E,115
Vgs - Gate-Source Breakdown Voltage 10 V
Rds On - Drain-Source Resistance 17.4 mOhms
Fall Time 31.1 ns
Packaging Reel
Alternate Part No. 771-BUK9Y22-100E115
Typical Turn-Off Delay Time 53.4 ns
Package/Case LFPAK56-4
Id - Continuous Drain Current 49 A
Rise Time 32.3 ns
Transistor Polarity N-Channel
Minimum Operating Temperature - 55 C
Manufacturer NXP
Maximum Operating Temperature + 175 C
Mounting Style SMD/SMT
Brand NXP Semiconductors
Qg - Gate Charge 35.8 nC
Configuration Triple Common Source
Product Category MOSFET
Pd - Power Dissipation 147 W
Vgs th - Gate-Source Threshold Voltage 1.7 V