NXP NX3008PBKW,115 View larger

NXP NX3008PBKW,115

NXP

NX3008PBKW,115


MOSFET 30V 200 MA P-CH TRENCH MOSFET

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$ 0.65

7297 7297 Items In Stock

Specification of NX3008PBKW,115

Vgs th - Gate-Source Threshold Voltage 1.1 V
Qg - Gate Charge 0.72 nC
Mounting Style SMD/SMT
Manufacturer NXP
Rds On - Drain-Source Resistance 4.1 Ohms
Typical Turn-Off Delay Time 65 ns
Vds - Drain-Source Breakdown Voltage - 30 V
Transistor Polarity P-Channel
Manufacturer Part No. NX3008PBKW,115
Alternate Part No. 771-NX3008PBKW,115
Pd - Power Dissipation 260 mW
Forward Transconductance - Min 160 mS
Channel Mode Enhancement
Brand NXP Semiconductors
Maximum Operating Temperature + 150 C
Package/Case SOT-323-3
Product Category MOSFET
Configuration Single
Fall Time 38 ns
Minimum Operating Temperature - 55 C
Id - Continuous Drain Current 200 mA
Packaging Reel
Rise Time 30 ns

More info

NX3008PBKW,115 NXP Semiconductors MOSFET 30V 200 MA P-CH TRENCH MOSFET MOSFET Pricing and Availability. [1]

NX3008PBKW. 30 V, 200 mA P-channel Trench MOSFET. Rev. 1 — 1 August 2011. Product data sheet. SOT323. Table 1. Quick reference data. Symbol. [2]

P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 ( SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET ... [3]

NX3008PBKW,115 from NXP. Find the PDF Datasheet, Specifications and Distributor Information. [4]

References