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NXP PHB27NQ10T,118

NXP

PHB27NQ10T,118


MOSFET TAPE13 PWR-MOS

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$ 2.24

990 990 Items In Stock

Specification of PHB27NQ10T,118

Vgs - Gate-Source Breakdown Voltage 20 V
Minimum Operating Temperature - 55 C
Manufacturer Part No. PHB27NQ10T,118
Product Category MOSFET
Rds On - Drain-Source Resistance 50 mOhms
Part # Aliases /T3 PHB27NQ10T
Id - Continuous Drain Current 28 A
Pd - Power Dissipation 107 W
Rise Time 43 ns
Fall Time 24 ns
Maximum Operating Temperature + 175 C
Transistor Polarity N-Channel
Brand NXP Semiconductors
Packaging Reel
Package/Case SOT-404-3
Manufacturer NXP
Alternate Part No. 771-PHB27NQ10T118
Configuration Single Dual Drain
Vds - Drain-Source Breakdown Voltage 100 V
Typical Turn-Off Delay Time 32 ns
Channel Mode Enhancement
Mounting Style SMD/SMT

More info

PHB27NQ10T,118 Nexperia MOSFET TAPE13 PWR-MOS datasheet, inventory, & pricing. [1]

PHB27NQ10T. N-channel TrenchMOS standard level FET. Rev. 02 — 17 December 2010. Product data sheet. Table 1. Quick reference data. Symbol. [2]

PHB27NQ10T,118 Nexperia MOSFET TAPE13 PWR-MOS hoja de datos, inventario y precios. [3]

References