NXP PSMN2R0-60ES,127 View larger

NXP PSMN2R0-60ES,127

NXP

PSMN2R0-60ES,127


MOSFET N-Ch 60V 2.2 mOhms

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$ 6.04

37 37 Items In Stock

Specification of PSMN2R0-60ES,127

Qg - Gate Charge 137 nC
Rds On - Drain-Source Resistance 2.2 mOhms
Vds - Drain-Source Breakdown Voltage 60 V
Configuration Single
Transistor Polarity N-Channel
Alternate Part No. 771-PSMN2R060ES127
Pd - Power Dissipation 338 W
Brand NXP Semiconductors
Package/Case I2PAK-3
Maximum Operating Temperature + 175 C
Product Category MOSFET
Id - Continuous Drain Current 120 A
Minimum Operating Temperature - 55 C
Manufacturer Part No. PSMN2R0-60ES,127
Vgs th - Gate-Source Threshold Voltage 3 V
Vgs - Gate-Source Breakdown Voltage 20 V
Manufacturer NXP
Packaging Tube
Mounting Style Through Hole

More info

Apr 19, 2011 - Motor control. ▫ Server power supplies. 1.4 Quick reference data. PSMN2R0- 60ES. N-channel 60 V 2.2 mΩ standard level MOSFET in I2PAK. [1]

PSMN2R0-60ES,127 NXP Semiconductors MOSFET N-Ch 60V 2.2 mOhms MOSFET Pricing and Availability. [2]

Find NXP Semiconductors PSMN2R0-60PS,127 (PSMN2R0-60PS - N-channel 60 V 2.2 m standard level MOSFET in TO-220) offers and datasheets at Octopart. [3]

References