NXP PSMN6R1-30YLDX View larger

NXP PSMN6R1-30YLDX

NXP

PSMN6R1-30YLDX


MOSFET N-channel 30 V 6.1 mo FET

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$ 1.23

424 424 Items In Stock

Specification of PSMN6R1-30YLDX

Rds On - Drain-Source Resistance 6.5 mOhms
Qg - Gate Charge 13.6 nC
Alternate Part No. 771-PSMN6R1-30YLDX
Vgs - Gate-Source Breakdown Voltage 20 V
Typical Turn-Off Delay Time 9.8 ns
Vds - Drain-Source Breakdown Voltage 30 V
Mounting Style SMD/SMT
Manufacturer NXP
Minimum Operating Temperature - 55 C
Product Category MOSFET
Manufacturer Part No. PSMN6R1-30YLDX
Transistor Polarity N-Channel
Pd - Power Dissipation 47 W
Brand NXP Semiconductors
Channel Mode Enhancement
Configuration Single
Fall Time 7.2 ns
Vgs th - Gate-Source Threshold Voltage 1.68 V
Package/Case LFPAK56-4
Maximum Operating Temperature + 175 C
Rise Time 11 ns
Id - Continuous Drain Current 66 A
Packaging Reel

More info

PSMN6R1-30YLDX NXP Semiconductors MOSFET N-channel 30 V 6.1 mo FET MOSFET Pricing and Availability. Contact Mouser (USA) (800) 346-6873 | Feedback ... [1]

... Single > NXP Semiconductors PSMN6R1-30YLDX. ... PSMN6R1-30YLD: Product Photos: LFPAK-4, SOT669: ... Alternate Package ... [2]

References