NXP PSMN8R5-100PSQ View larger

NXP PSMN8R5-100PSQ

NXP

PSMN8R5-100PSQ


MOSFET PSMN8R5-100PS/SIL3P/RAILH

$ 3.97

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Specification of PSMN8R5-100PSQ

Product Category MOSFET
Rise Time 35 ns
Vgs th - Gate-Source Threshold Voltage 4 V
Manufacturer NXP
Vds - Drain-Source Breakdown Voltage 100 V
Manufacturer Part No. PSMN8R5-100PSQ
Id - Continuous Drain Current 100 A
Alternate Part No. 771-PSMN8R5-100PSQ
Package/Case TO-220-3
Packaging Tube
Qg - Gate Charge 111 nC
Transistor Polarity N-Channel
Fall Time 43 ns
Pd - Power Dissipation 263 W
Mounting Style Through Hole
Rds On - Drain-Source Resistance 22.6 mOhms
Brand NXP Semiconductors
Typical Turn-Off Delay Time 87 ns