ON Semiconductor 2N5195G View larger

ON Semiconductor 2N5195G

ON Semiconductor

2N5195G


Transistors Bipolar - BJT 4A 80V 40W PNP

$ 1.13

433 433 Items In Stock

Specification of 2N5195G

Maximum Operating Temperature + 150 C
Minimum Operating Temperature - 65 C
Continuous Collector Current 4 A
Product Category Transistors Bipolar - BJT
Mounting Style Through Hole
Gain Bandwidth Product fT 2 MHz
Collector- Base Voltage VCBO 80 V
Manufacturer ON Semiconductor
Series 2N5195
Package/Case TO-225-3
Collector- Emitter Voltage VCEO Max 80 V
Transistor Polarity PNP
Packaging Bulk
Maximum Power Dissipation 40 W
Alternate Part No. 863-2N5195G
Configuration Single
Collector-Emitter Saturation Voltage 1.4 V
Brand ON Semiconductor
DC Collector/Base Gain hFE Min 20
Emitter- Base Voltage VEBO 5 V
Maximum DC Collector Current 4 A
Manufacturer Part No. 2N5195G