ON Semiconductor 2N5550G View larger

ON Semiconductor 2N5550G

ON Semiconductor


Transistors Bipolar - BJT 600mA 160V NPN

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$ 0.73

6691 6691 Items In Stock

Specification of 2N5550G

Manufacturer Part No. 2N5550G
Alternate Part No. 863-2N5550G
Maximum Power Dissipation 625 mW
Collector- Base Voltage VCBO 160 V
Minimum Operating Temperature - 55 C
Collector-Emitter Saturation Voltage 0.25 V
Configuration Single
Packaging Bulk
Emitter- Base Voltage VEBO 6 V
Package/Case TO-92-3 (TO-226)
Maximum Operating Temperature + 150 C
Gain Bandwidth Product fT 300 MHz
Collector- Emitter Voltage VCEO Max 140 V
Manufacturer ON Semiconductor
Continuous Collector Current 0.6 A
Brand ON Semiconductor
DC Collector/Base Gain hFE Min 60
Series 2N5550
Product Category Transistors Bipolar - BJT
Mounting Style Through Hole
Maximum DC Collector Current 0.6 A
Transistor Polarity NPN

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