ON Semiconductor 2SB817C-1E View larger

ON Semiconductor 2SB817C-1E

ON Semiconductor

2SB817C-1E


Transistors Bipolar - BJT BIP PNP 12A 140V

$ 5.23

260 260 Items In Stock

Specification of 2SB817C-1E

Transistor Polarity PNP
Collector- Base Voltage VCBO 160 V
DC Collector/Base Gain hFE Min 100
Emitter- Base Voltage VEBO 6 V
Collector-Emitter Saturation Voltage 2 V
Manufacturer Part No. 2SB817C-1E
Brand ON Semiconductor
DC Current Gain hFE Max 200 A
Continuous Collector Current 12 A
Series 2SB817C
Alternate Part No. 863-2SB817C-1E
Maximum DC Collector Current 12 A
Mounting Style Through Hole
Manufacturer ON Semiconductor
Collector- Emitter Voltage VCEO Max 140 V
Maximum Power Dissipation 120 W
Package/Case TO-3PB
Product Category Transistors Bipolar - BJT