ON Semiconductor 2SC3332S View larger

ON Semiconductor 2SC3332S

ON Semiconductor

2SC3332S


Transistors Bipolar - BJT BIP NPN 0.7A 160V

$ 0.82

1224 1224 Items In Stock

Specification of 2SC3332S

Package/Case TO-92
Manufacturer ON Semiconductor
Maximum Power Dissipation 700 mW
Packaging Bulk
Manufacturer Part No. 2SC3332S
Collector- Emitter Voltage VCEO Max 160 V
Collector-Emitter Saturation Voltage 0.12 V
Emitter- Base Voltage VEBO 6 V
Continuous Collector Current 0.7 A
Mounting Style Through Hole
DC Collector/Base Gain hFE Min 100
Maximum Operating Temperature + 150 C
Brand ON Semiconductor
Configuration Single
Alternate Part No. 863-2SC3332S
Series 2SC3332
Collector- Base Voltage VCBO 180 V
Minimum Operating Temperature - 55 C
Gain Bandwidth Product fT 120 MHz
Product Category Transistors Bipolar - BJT
DC Current Gain hFE Max 400
Transistor Polarity NPN