ON Semiconductor 2SC5658RM3T5G View larger

ON Semiconductor 2SC5658RM3T5G

ON Semiconductor

2SC5658RM3T5G


Transistors Bipolar - BJT SS GENERAL PURPOSE NPN

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$ 0.74

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Specification of 2SC5658RM3T5G

Mounting Style SMD/SMT
Configuration Single
Continuous Collector Current 100 mA
Transistor Polarity NPN
Collector- Emitter Voltage VCEO Max 50 V
Gain Bandwidth Product fT 180 MHz
Collector- Base Voltage VCBO 50 V
Series 2SC5658RM3
Emitter- Base Voltage VEBO 5 V
Manufacturer ON Semiconductor
Package/Case SOT-723
DC Current Gain hFE Max 560
Product Category Transistors Bipolar - BJT
Brand ON Semiconductor
Packaging Reel
Maximum Power Dissipation 260 mW
Manufacturer Part No. 2SC5658RM3T5G
Alternate Part No. 863-2SC5658RM3T5G
Collector-Emitter Saturation Voltage 0.4 V
DC Collector/Base Gain hFE Min 120

More info

2SC5658RM3T5G. NPN Silicon General. Purpose Amplifier Transistor. This NPN transistor is designed for general purpose amplifier applications. This device is ... [1]

2SC5658RM3T5G datasheet, 2SC5658RM3T5G circuit, 2SC5658RM3T5G data sheet : ONSEMI - NPN Silicon General Purpose Amplifier Transistor ... [2]

References