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ON Semiconductor BD139G

ON Semiconductor


Transistors Bipolar - BJT 1.5A 80V 12.5W NPN

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$ 1.04

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Specification of BD139G

DC Collector/Base Gain hFE Min 25
Continuous Collector Current 1.5 A
Emitter- Base Voltage VEBO 5 V
Minimum Operating Temperature - 55 C
Configuration Single
Collector- Base Voltage VCBO 80 V
Transistor Polarity NPN
Series BD139
Mounting Style SMD/SMT
Product Category Transistors Bipolar - BJT
Package/Case TO-225
Maximum DC Collector Current 1.5 A
Manufacturer Part No. BD139G
Collector-Emitter Saturation Voltage 0.5 V
Maximum Power Dissipation 1.25 W
Manufacturer ON Semiconductor
Alternate Part No. 863-BD139G
Brand ON Semiconductor
Maximum Operating Temperature + 150 C
Collector- Emitter Voltage VCEO Max 80 V
Packaging Bulk

More info

Semiconductor Components Industries, LLC, 2013. December, 2013 − Rev. 17. 1 . Publication Order Number: BD135/D. BD135G, BD137G, BD139G. [1]

BD139G Transistor Datasheet pdf, BD139G Equivalent. Parameters and Characteristics. Electronic Component Catalog. [2]

BD139G datasheet, BD139G circuit, BD139G data sheet : ONSEMI - Plastic Medium Power Silicon NPN Transistor ,alldatasheet, datasheet, Datasheet search ... [3]