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Transistors Bipolar - BJT
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STMicroelectronics BUL416T
Transistors Bipolar - BJT NPN HI-VOLT FAST SW
Specification of BUL416T
| Manufacturer | STMicroelectronics |
| Maximum Power Dissipation | 110 W |
| DC Collector/Base Gain hFE Min | 18 |
| Continuous Collector Current | 6 A |
| Brand | STMicroelectronics |
| Emitter- Base Voltage VEBO | 9 V |
| Series | BUL416 |
| Alternate Part No. | 511-BUL416T |
| Product Category | Transistors Bipolar - BJT |
| Mounting Style | Through Hole |
| Packaging | Tube |
| Maximum DC Collector Current | 9 A |
| Transistor Polarity | NPN |
| DC Current Gain hFE Max | 32 |
| Package/Case | TO-220 |
| Collector- Emitter Voltage VCEO Max | 800 V |
| Manufacturer Part No. | BUL416T |
| Maximum Operating Temperature | + 150 C |