New STMicroelectronics IRF630 View larger

STMicroelectronics IRF630

STMicroelectronics

IRF630


MOSFET N-Ch 200 Volt 10 Amp

More details


$ 2.42

1317 1317 Items In Stock

Specification of IRF630

Transistor Polarity N-Channel
Mounting Style Through Hole
Brand STMicroelectronics
Id - Continuous Drain Current 9 A
Vgs - Gate-Source Breakdown Voltage 20 V
Minimum Operating Temperature - 65 C
Alternate Part No. 511-IRF630
Pd - Power Dissipation 75 W
Manufacturer STMicroelectronics
Product Category MOSFET
Rds On - Drain-Source Resistance 400 mOhms
Configuration Single
Rise Time 15 ns
Series IRF630
Vds - Drain-Source Breakdown Voltage 200 V
Packaging Tube
Manufacturer Part No. IRF630
Channel Mode Enhancement
Forward Transconductance - Min 4 S
Maximum Operating Temperature + 150 C
Package/Case TO-220-3

More info

References