STMicroelectronics LET9060F View larger

STMicroelectronics LET9060F



Transistors RF MOSFET RF Power LdmoST 60W 18 dB 945MHz

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$ 136.17

42 42 Items In Stock

Specification of LET9060F

Output Power 90 W
Maximum Operating Temperature + 150 C
Brand STMicroelectronics
Vgs - Gate-Source Breakdown Voltage 15 V
Technology LDMOS
Packaging Bulk
Product Category Transistors RF MOSFET
Transistor Type LDMOS Power
Mounting Style SMD/SMT
Alternate Part No. 511-LET9060F
Transistor Polarity N-Channel
Package/Case M250
Manufacturer Part No. LET9060F
Frequency 1 GHz
Manufacturer STMicroelectronics
Id - Continuous Drain Current 12 A
Gain 18 dB at 945 MHz
Pd - Power Dissipation 130 W
Configuration Single
Series LET9060
Vds - Drain-Source Breakdown Voltage 80 V

More info

LET9060F STMicroelectronics RF MOSFET Transistors RF Power LdmoST 60W 18 dB 945MHz RF MOSFET Transistors Pricing and Availability. [1]

The LET9060F is a common source n-channel enhancement-mode lateral field- effect RF power transistor designed for broadband commercial and industrial ... [2]