STMicroelectronics STAC4932B View larger

STMicroelectronics STAC4932B

STMicroelectronics

STAC4932B


Transistors RF MOSFET RF PWR 1000w/m 26dB N-Ch 123 MHz VHF/UHF

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$ 183.61

38 38 Items In Stock

Specification of STAC4932B

Id - Continuous Drain Current 1 mA
Minimum Operating Temperature - 65 C
Manufacturer STMicroelectronics
Brand STMicroelectronics
Output Power 1.2 kW
Gain 26 dB at 123 MHz
Series STAC4932B
Mounting Style SMD/SMT
Product Type RF Power Transistor
Forward Transconductance - Min 6 S
Manufacturer Part No. STAC4932B
Frequency 250 MHz
Alternate Part No. 511-STAC4932B
Vds - Drain-Source Breakdown Voltage 200 V
Configuration Dual Common Source
Maximum Operating Temperature + 150 C
Vgs - Gate-Source Breakdown Voltage 20 V
Product Category Transistors RF MOSFET
Transistor Polarity N-Channel
Packaging Tray
Package/Case STAC244B

More info

27. 1. 2014 - The STAC4932B is an N-channel MOS field-effect. RF power transistor. It is intended for 100 V pulse applications up to 250 MHz. This device is. [1]

MOSFET ; 0 MHz; 250 MHz; 1200 W; 26 dB; CW ; 60 %; 100 VDC. [2]

STAC4932B STMicroelectronics RF MOSFET Transistors RF PWR 1000w/m 26dB N-Ch 123 MHz VHF/UHF RF MOSFET Transistors Pricing and Availability. [3]

The STAC4932B is an N-channel MOS field-effect RF power transistor. It is intended for 100 V pulse applications up to 250 MHz. This device is suitable for use ... [4]

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