STMicroelectronics STB13NM60N View larger

STMicroelectronics STB13NM60N

STMicroelectronics

STB13NM60N


MOSFET POWER MOSFET N-CH

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$ 8.70

490 490 Items In Stock

Specification of STB13NM60N

Vgs th - Gate-Source Threshold Voltage 3 V
Manufacturer Part No. STB13NM60N
Minimum Operating Temperature - 55 C
Series STB13NM60N
Maximum Operating Temperature + 150 C
Configuration Single
Manufacturer STMicroelectronics
Brand STMicroelectronics
Fall Time 10 ns
Qg - Gate Charge 27 nC
Pd - Power Dissipation 90 W
Id - Continuous Drain Current 11 A
Rds On - Drain-Source Resistance 360 mOhms
Vds - Drain-Source Breakdown Voltage 650 V
Package/Case D2PAK-2
Typical Turn-Off Delay Time 30 ns
Transistor Polarity N-Channel
Alternate Part No. 511-STB13NM60N
Rise Time 8 ns
Mounting Style SMD/SMT
Vgs - Gate-Source Breakdown Voltage 25 V
Packaging Reel
Product Category MOSFET

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