STMicroelectronics STB150N3LH6 View larger

STMicroelectronics STB150N3LH6



MOSFET N-Ch 30V 2.4mOhm 80A STripFET VI DeepGATE

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$ 5.21

441 441 Items In Stock

Specification of STB150N3LH6

Vgs th - Gate-Source Threshold Voltage 2.5 V
Packaging Reel
Vgs - Gate-Source Breakdown Voltage 20 V
Manufacturer Part No. STB150N3LH6
Fall Time 40 ns
Alternate Part No. 511-STB150N3LH6
Package/Case D2PAK-2
Rise Time 85 ns
Id - Continuous Drain Current 80 A
Series STB150N3LH6
Vds - Drain-Source Breakdown Voltage 30 V
Brand STMicroelectronics
Pd - Power Dissipation 110 W
Typical Turn-Off Delay Time 100 ns
Manufacturer STMicroelectronics
Transistor Polarity N-Channel
Rds On - Drain-Source Resistance 3 mOhms
Mounting Style SMD/SMT
Configuration Single
Qg - Gate Charge 80 nC
Product Category MOSFET

More info

STB150N3LH6 STMicroelectronics MOSFET N-Ch 30V 2.4mOhm 80A STripFET VI DeepGATE datasheet, inventory, & pricing. [1]

Order STMicroelectronics STB150N3LH6 (497-13263-1-ND) at DigiKey. Check stock and pricing, view product specifications, and order online. [2]

11. 7. 2012 - STB150N3LH6. N-channel 30 V, 2.4 mΩ typ., 80 A, STripFET™ VI DeepGATE™. Power MOSFET in D²PAK package. Datasheet — production ... [3]