STMicroelectronics STB32NM50N View larger

STMicroelectronics STB32NM50N



MOSFET N-Ch 500V 0.1 Ohm 22A MDmesh II

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$ 12.17

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Specification of STB32NM50N

Package/Case D2PAK-2
Product Category MOSFET
Rds On - Drain-Source Resistance 130 mOhms
Typical Turn-Off Delay Time 110 ns
Vgs - Gate-Source Breakdown Voltage 25 V
Mounting Style SMD/SMT
Alternate Part No. 511-STB32NM50N
Fall Time 23.6 ns
Brand STMicroelectronics
Manufacturer Part No. STB32NM50N
Manufacturer STMicroelectronics
Qg - Gate Charge 62.5 nC
Packaging Reel
Series STB32NM50N
Vds - Drain-Source Breakdown Voltage 500 V
Pd - Power Dissipation 190 W
Id - Continuous Drain Current 22 A
Transistor Polarity N-Channel
Vgs th - Gate-Source Threshold Voltage 4 V
Rise Time 9.5 ns
Configuration Single

More info

These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET ... [1]