STMicroelectronics STD120N4F6 View larger

STMicroelectronics STD120N4F6



MOSFET N-Ch 40V 4mOhm 80A STripFET VI DeepGATE

More details

$ 4.39

1767 1767 Items In Stock

Specification of STD120N4F6

Packaging Reel
Alternate Part No. 511-STD120N4F6
Pd - Power Dissipation 110 W
Manufacturer Part No. STD120N4F6
Qg - Gate Charge 65 nC
Minimum Operating Temperature - 55 C
Manufacturer STMicroelectronics
Product Category MOSFET
Maximum Operating Temperature + 175 C
Transistor Polarity N-Channel
Configuration Single
Vds - Drain-Source Breakdown Voltage 40 V
Id - Continuous Drain Current 80 A
Rds On - Drain-Source Resistance 4 mOhms
Vgs - Gate-Source Breakdown Voltage 20 V
Vgs th - Gate-Source Threshold Voltage 4 V
Series STD120N4F6
Brand STMicroelectronics
Package/Case DPAK-2
Mounting Style SMD/SMT

More info

These devices are N-channel Power MOSFETs developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. [1]

STB120N4F6. STD120N4F6. N-channel 40 V, 3.5 mΩ , 80 A, DPAK, D²PAK. STripFET™ VI DeepGATE™ Power MOSFET. Features. □ Standard threshold drive. [2]

Buy STD120N4F6 with extended same day shipping times. View datasheets, stock and pricing, or find other MOSFETs. [3]