STMicroelectronics STD1HN60K3 View larger

STMicroelectronics STD1HN60K3

STMicroelectronics

STD1HN60K3


MOSFET N-Ch 600V 6.4Ohm 1.2A SuperMESH3 FET

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$ 1.84

1039 1039 Items In Stock

Specification of STD1HN60K3

Package/Case DPAK-2
Alternate Part No. 511-STD1HN60K3
Id - Continuous Drain Current 1.2 A
Manufacturer Part No. STD1HN60K3
Mounting Style SMD/SMT
Vgs - Gate-Source Breakdown Voltage 30 V
Product Category MOSFET
Typical Turn-Off Delay Time 23 ns
Tradename SuperMesh
Rds On - Drain-Source Resistance 6.7 Ohms
Manufacturer STMicroelectronics
Channel Mode Enhancement
Transistor Polarity N-Channel
Fall Time 31 ns
Packaging Reel
Minimum Operating Temperature - 55 C
Series STD1HN60K3
Maximum Operating Temperature + 150 C
Configuration Single
Rise Time 10 ns
Qg - Gate Charge 9.5 nC
Pd - Power Dissipation 27 W
Vds - Drain-Source Breakdown Voltage 600 V
Vgs th - Gate-Source Threshold Voltage 3.75 V
Brand STMicroelectronics

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