STMicroelectronics STF13N95K3 View larger

STMicroelectronics STF13N95K3

STMicroelectronics

STF13N95K3


MOSFET N-Ch 950V 0.68 Ohm 10A SuperMESH3

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$ 12.04

453 453 Items In Stock

Specification of STF13N95K3

Vgs - Gate-Source Breakdown Voltage 30 V
Transistor Polarity N-Channel
Typical Turn-Off Delay Time 50 ns
Channel Mode Enhancement
Manufacturer Part No. STF13N95K3
Pd - Power Dissipation 40 W
Packaging Tube
Manufacturer STMicroelectronics
Vds - Drain-Source Breakdown Voltage 950 V
Rise Time 16 ns
Minimum Operating Temperature - 55 C
Id - Continuous Drain Current 10 A
Product Category MOSFET
Brand STMicroelectronics
Fall Time 21 ns
Maximum Operating Temperature + 150 C
Configuration Single
Mounting Style Through Hole
Alternate Part No. 511-STF13N95K3
Package/Case TO-220FP-3
Qg - Gate Charge 51 nC
Series STF13N95K3
Rds On - Drain-Source Resistance 850 mOhms

More info

Jun 21, 2012 - Packaging. STF13N95K3. 13N95K3. TO-220FP. Tube. STFI13N95K3. I2PAKFP. STP13N95K3. TO-220. STW13N95K3. TO-247 www.st.com ... [1]

These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics' SuperMESH™ technology, combined with a new ... [2]

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