STMicroelectronics STGF10H60DF View larger

STMicroelectronics STGF10H60DF

STMicroelectronics

STGF10H60DF


IGBT Transistors Trench gate H series 600V 10A HiSpd

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$ 2.45

592 592 Items In Stock

Specification of STGF10H60DF

Product Category IGBT Transistors
Gate-Emitter Leakage Current 250 nA
Maximum Operating Temperature + 175 C
Packaging Tube
Collector-Emitter Saturation Voltage 1.5 V
Maximum Gate Emitter Voltage +/- 20 V
Series STGF10H60DF
Continuous Collector Current at 25 C 20 A
Minimum Operating Temperature - 55 C
Collector- Emitter Voltage VCEO Max 600 V
Brand STMicroelectronics
Continuous Collector Current Ic Max 10 A
Configuration Single
Manufacturer STMicroelectronics
Alternate Part No. 511-STGF10H60DF
Package/Case TO-220-3 FP
Power Dissipation 30 W
Manufacturer Part No. STGF10H60DF
Mounting Style Through Hole

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STGF10H60DF STMicroelectronics IGBT Transistors Trench gate H series 600V 10A HiSpd datasheet, inventory, & pricing. [1]

Collector Emitter Breakdown Voltage, 600 V. Collector Emitter Saturation Voltage , 1.5 V. Collector Emitter Voltage (VCEO), 600 V. Element Configuration, Single. [2]

Oct 31, 2013 - STGB10H60DF,. STGF10H60DF, STGP10H60DF. Trench gate field-stop IGBT, H series. 600 V, 10 A high speed. Datasheet - production data. [3]

STGF10H60DF PDF datasheet & technical specifications. Download or read online STMicroelectronics STGF10H60DF IGBT Transistors Trench gate H series ... [4]

References