STMicroelectronics STGW80H65DFB View larger

STMicroelectronics STGW80H65DFB

STMicroelectronics

STGW80H65DFB


IGBT Transistors Trench gte FieldStop IGBT 650V 80A

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$ 11.74

190 190 Items In Stock

Specification of STGW80H65DFB

Continuous Collector Current Ic Max 80 A
Continuous Collector Current at 25 C 120 A
Configuration Single
Collector- Emitter Voltage VCEO Max 650 V
Minimum Operating Temperature - 55 C
Manufacturer STMicroelectronics
Series STGW80H65DFB
Product Category IGBT Transistors
Gate-Emitter Leakage Current 250 nA
Maximum Gate Emitter Voltage 20 V
Power Dissipation 469 W
Packaging Tube
Package/Case TO-247-3
Manufacturer Part No. STGW80H65DFB
Brand STMicroelectronics
Collector-Emitter Saturation Voltage 1.6 V
Alternate Part No. 511-STGW80H65DFB
Maximum Operating Temperature + 175 C
Mounting Style Through Hole

More info

STGW80H65DFB,. STGWT80H65DFB. Trench gate field-stop IGBT, HB series 650 V, 80 A high speed. Datasheet - production data. Figure 1: Internal schematic ... [1]

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This is information on a product in full production. www.st.com. STGW80H65DFB- 4. Trench gate field-stop IGBT, HB series 650 V,. 80 A high speed in a TO247-4 ... [4]

12. 3. 2013 - STGW80H65DFB. STGWT80H65DFB. 650 V, 80 A high speed trench gate field- stop IGBT. Datasheet - preliminary data. Figure 1. Internal ... [5]

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