STMicroelectronics STP10N60M2 View larger

STMicroelectronics STP10N60M2

STMicroelectronics

STP10N60M2


MOSFET N-CH 600V 0.56Ohm 7.5A MDmesh II

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$ 3.40

1362 1362 Items In Stock

Specification of STP10N60M2

Series STP10N60M2
Qg - Gate Charge 13.5 nC
Packaging Tube
Configuration Single
Pd - Power Dissipation 85 W
Mounting Style Through Hole
Rds On - Drain-Source Resistance 560 mOhms
Package/Case TO-220-3
Maximum Operating Temperature + 150 C
Vgs th - Gate-Source Threshold Voltage 3 V
Minimum Operating Temperature - 55 C
Vds - Drain-Source Breakdown Voltage 600 V
Typical Turn-Off Delay Time 32.5 ns
Id - Continuous Drain Current 7.5 A
Brand STMicroelectronics
Product Category MOSFET
Transistor Polarity N-Channel
Vgs - Gate-Source Breakdown Voltage 25 V
Alternate Part No. 511-STP10N60M2
Fall Time 13.2 ns
Manufacturer STMicroelectronics
Rise Time 8 ns
Manufacturer Part No. STP10N60M2

More info

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