STMicroelectronics STP10N60M2 View larger

STMicroelectronics STP10N60M2



MOSFET N-CH 600V 0.56Ohm 7.5A MDmesh II

More details

$ 3.42

1362 1362 Items In Stock

Specification of STP10N60M2

Series STP10N60M2
Qg - Gate Charge 13.5 nC
Packaging Tube
Configuration Single
Pd - Power Dissipation 85 W
Mounting Style Through Hole
Rds On - Drain-Source Resistance 560 mOhms
Package/Case TO-220-3
Maximum Operating Temperature + 150 C
Vgs th - Gate-Source Threshold Voltage 3 V
Minimum Operating Temperature - 55 C
Vds - Drain-Source Breakdown Voltage 600 V
Typical Turn-Off Delay Time 32.5 ns
Id - Continuous Drain Current 7.5 A
Brand STMicroelectronics
Product Category MOSFET
Transistor Polarity N-Channel
Vgs - Gate-Source Breakdown Voltage 25 V
Alternate Part No. 511-STP10N60M2
Fall Time 13.2 ns
Manufacturer STMicroelectronics
Rise Time 8 ns
Manufacturer Part No. STP10N60M2

More info

6. 12. 2013 - STB10N60M2. 10N60M2. D. 2. PAK. Tape and reel. STD10N60M2. DPAK. STP10N60M2. TO-220. Tube. STU10N60M2. IPAK ... [1]

These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary ... [2]

STP10N60M2 - N-channel 600 V, 0.55 Ohm typ., 7.5 A MDmesh M2 Power MOSFET in TO-220 package, STMicroelectronics, STP10N60M2. [3]

No lead time on STP10N60M2, MOSFET N-CH 600V 0.56Ohm 7.5A MDmesh II. Check stock and price. AERI is a distributor of obsolete ST Microelectronics ... [4]

ST-Microelectronics STP10N60M2 datasheet : MOSFET N-CH 600V 0.56Ohm 7.5A MDmesh II, STP10N60M2 datasheet, STP10N60M2 pdf, STP10N60M2 ... [5]

Stp10n60m2 Stmicroelectronics Original , Find Complete Details about Stp10n60m2 Stmicroelectronics Original,Stp10n60m2 St Microelectronics,(hot ... [6]