STMicroelectronics STU7NM60N View larger

STMicroelectronics STU7NM60N



MOSFET N-Ch 600V 0.84 Ohm 5A 2nd Gen MDmesh

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$ 3.42

890 890 Items In Stock

Specification of STU7NM60N

Package/Case IPAK-3
Channel Mode Enhancement
Rise Time 10 ns
Transistor Polarity N-Channel
Configuration Single
Series STU7NM60N
Id - Continuous Drain Current 5 A
Manufacturer Part No. STU7NM60N
Minimum Operating Temperature - 55 C
Rds On - Drain-Source Resistance 900 mOhms
Mounting Style Through Hole
Brand STMicroelectronics
Vgs - Gate-Source Breakdown Voltage 25 V
Pd - Power Dissipation 45 W
Product Category MOSFET
Fall Time 12 ns
Vds - Drain-Source Breakdown Voltage 600 V
Maximum Operating Temperature + 150 C
Manufacturer STMicroelectronics
Alternate Part No. 511-STU7NM60N
Typical Turn-Off Delay Time 26 ns
Packaging Tube
Qg - Gate Charge 14 nC

More info

These devices are N-channel Power MOSFETs realized using the second generation of MDmeshTMtechnology. It applies the benefits of the multiple drain ... [1]

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