Texas Instruments CSD19531KCS View larger

Texas Instruments CSD19531KCS

Texas Instruments

CSD19531KCS


MOSFET 100V 6.4mOhm Pwr MOSFET

$ 5.24

272 272 Items In Stock

Specification of CSD19531KCS

Tradename NexFET
Manufacturer Texas Instruments
Pd - Power Dissipation 179 W
Mounting Style Through Hole
Minimum Operating Temperature - 55 C
Packaging Tube
Channel Mode Enhancement
Brand Texas Instruments
Qg - Gate Charge 38 nC
Manufacturer Part No. CSD19531KCS
Package/Case TO-220-3
Series CSD19531KCS
Vgs - Gate-Source Breakdown Voltage 20 V
Alternate Part No. 595-CSD19531KCS
Product Category MOSFET
Vds - Drain-Source Breakdown Voltage 100 V
Transistor Polarity N-Channel
Typical Turn-Off Delay Time 16 ns
Maximum Operating Temperature + 175 C
Configuration Single
Fall Time 4.1 ns
Vgs th - Gate-Source Threshold Voltage 2.7 V
Id - Continuous Drain Current 105 A
Rds On - Drain-Source Resistance 7.7 mOhms
Rise Time 7.2 ns