Texas Instruments CSD86311W1723 View larger

Texas Instruments CSD86311W1723

Texas Instruments

CSD86311W1723


MOSFET Dual N-Channel Nex FET Pwr MOSFET

$ 2.82

1022 1022 Items In Stock

Specification of CSD86311W1723

Vds - Drain-Source Breakdown Voltage 25 V
Manufacturer Texas Instruments
Brand Texas Instruments
Product Category MOSFET
Transistor Polarity N-Channel
Configuration Dual Common Source
Qg - Gate Charge 3.1 nC
Alternate Part No. 595-CSD86311W1723
Rise Time 4.3 ns
Manufacturer Part No. CSD86311W1723
Pd - Power Dissipation 1.5 W
Package/Case DSBGA-12
Fall Time 2.9 ns
Forward Transconductance - Min 6.4 S
Maximum Operating Temperature + 150 C
Tradename NexFET
Vgs - Gate-Source Breakdown Voltage 10 V
Series CSD86311W1723
Id - Continuous Drain Current 4.5 A
Minimum Operating Temperature - 55 C
Rds On - Drain-Source Resistance 42 mOhms
Packaging Reel
Typical Turn-Off Delay Time 13.2 ns
Mounting Style SMD/SMT
Vgs th - Gate-Source Threshold Voltage 1 V