Vishay SI8810EDB-T2-E1 View larger

Vishay SI8810EDB-T2-E1

Vishay

SI8810EDB-T2-E1


MOSFET 20V .072ohm@4.5V 2.9A N-Ch

$ 0.41

2344 2344 Items In Stock

Specification of SI8810EDB-T2-E1

Package/Case XFBGA-4
Brand Vishay / Siliconix
Qg - Gate Charge 8 nC
Typical Turn-Off Delay Time 25 ns
Packaging Reel
Vds - Drain-Source Breakdown Voltage 20 V
Pd - Power Dissipation 500 mW
Transistor Polarity N-Channel
Product Category MOSFET
Mounting Style SMD/SMT
Id - Continuous Drain Current 2.1 A
Manufacturer Part No. SI8810EDB-T2-E1
Minimum Operating Temperature - 55 C
Manufacturer Vishay
Alternate Part No. 78-SI8810EDB-T2-E1
Forward Transconductance - Min 12 S
Maximum Operating Temperature + 150 C
Fall Time 7 ns
Vgs th - Gate-Source Threshold Voltage 0.9 V
Rds On - Drain-Source Resistance 72 mOhms
Rise Time 12 ns