Vishay SIA537EDJ-T1-GE3 View larger

Vishay SIA537EDJ-T1-GE3

Vishay

SIA537EDJ-T1-GE3


MOSFET 12V .028ohm@4.5V 4.5A N-CH

$ 1.39

2918 2918 Items In Stock

Specification of SIA537EDJ-T1-GE3

Maximum Operating Temperature + 150 C
Manufacturer Vishay
Manufacturer Part No. SIA537EDJ-T1-GE3
Tradename TrenchFET
Vgs - Gate-Source Breakdown Voltage 8 V
Pd - Power Dissipation 7.8 W
Vds - Drain-Source Breakdown Voltage 12 V, - 20 V
Series SIA537EDJ
Brand Vishay / Siliconix
Typical Turn-Off Delay Time 25 ns, 30 ns
Product Category MOSFET
Fall Time 12 ns, 10 ns
Vgs th - Gate-Source Threshold Voltage 1 V
Qg - Gate Charge 10.5 nC, 16.3 nC
Mounting Style SMD/SMT
Package/Case SC-70-6
Transistor Polarity N and P-Channel
Rise Time 12 ns, 15 ns
Alternate Part No. 78-SIA537EDJ-T1-GE3
Id - Continuous Drain Current 4.5 A
Forward Transconductance - Min 23 S
Rds On - Drain-Source Resistance 75 mOhms
Configuration Dual
Packaging Reel
Minimum Operating Temperature - 55 C